GT100N12M

Mfr.Part #
GT100N12M
Manufacturer
Goford Semiconductor
Package/Case
-
Datasheet
GT100N12M
Description
N120V,RD(MAX)<10M@10V,VTH2.5V~3.
Stock
800

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Manufacturer :
Goford Semiconductor
Product Category :
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
70A (Tc)
Drain to Source Voltage (Vdss) :
120 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
3050 pF @ 60 V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max) :
120W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
10mOhm @ 35A, 10V
Supplier Device Package :
TO-263
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
3.5V @ 250µA
Datasheets
GT100N12M

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