BSB280N15NZ3G
- Mfr.Part #
- BSB280N15NZ3G
- Manufacturer
- Infineon Technologies
- Package/Case
- -
- Datasheet
- BSB280N15NZ3G
- Description
- BSB280N15 - 12V-300V N-CHANNEL P
- Stock
- 35000
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 9A (Ta), 30A (Tc)
- Drain to Source Voltage (Vdss) :
- 150 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 21 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1600 pF @ 75 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -40°C ~ 150°C (TJ)
- Package / Case :
- DirectFET™ Isometric MX
- Power Dissipation (Max) :
- 2.8W (Ta), 57W (Tc)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 28mOhm @ 30A, 10V
- Supplier Device Package :
- MG-WDSON-2-5
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 4V @ 60µA
- Datasheets
- BSB280N15NZ3G
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Part | Manufacturer | Stock | Description |
---|---|---|---|
BSB280N15NZ3GXUMA1 | Infineon Technologies | 35,000 | MOSFET N-CH 150V 9A/30A 2WDSON |