RQ3P300BHTB1

Mfr.Part #
RQ3P300BHTB1
Manufacturer
ROHM Semiconductor
Package/Case
-
Datasheet
RQ3P300BHTB1
Description
NCH 100V 39A, HSMT8, POWER MOSFE
Stock
35000

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Manufacturer :
ROHM Semiconductor
Product Category :
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
39A (Ta)
Drain to Source Voltage (Vdss) :
100 V
Drive Voltage (Max Rds On, Min Rds On) :
6V, 10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
2040 pF @ 50 V
Mounting Type :
Surface Mount
Operating Temperature :
150°C (TJ)
Package / Case :
8-PowerVDFN
Power Dissipation (Max) :
2W (Ta)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
15.5mOhm @ 10A, 10V
Supplier Device Package :
8-HSMT (3.2x3)
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
4V @ 1mA
Datasheets
RQ3P300BHTB1

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RQ3P300BETB1 ROHM Semiconductor 35,000 MOSFET N-CH 100V 10A/36A 8HSMT