IPD220N06L3GATMA1

Mfr.Part #
IPD220N06L3GATMA1
Manufacturer
Infineon Technologies
Package/Case
-
Datasheet
IPD220N06L3GATMA1
Description
MOSFET N-CH 60V 30A TO252-3
Stock
35000

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Manufacturer :
Infineon Technologies
Product Category :
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
30A (Tc)
Drain to Source Voltage (Vdss) :
60 V
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds :
1600 pF @ 30 V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 175°C (TJ)
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Max) :
36W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
22mOhm @ 30A, 10V
Supplier Device Package :
PG-TO252-3-311
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
2.2V @ 11µA
Datasheets
IPD220N06L3GATMA1

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