SI7101DN-T1-GE3

Mfr.Part #
SI7101DN-T1-GE3
Manufacturer
Vishay
Package/Case
-
Datasheet
SI7101DN-T1-GE3
Description
MOSFET P-CH 30V 35A PPAK 1212-8
Stock
11

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Manufacturer :
Vishay
Product Category :
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
35A (Tc)
Drain to Source Voltage (Vdss) :
30 V
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
FET Feature :
-
FET Type :
P-Channel
Gate Charge (Qg) (Max) @ Vgs :
102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
3595 pF @ 15 V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
PowerPAK® 1212-8
Power Dissipation (Max) :
3.7W (Ta), 52W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
7.2mOhm @ 15A, 10V
Supplier Device Package :
PowerPAK® 1212-8
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±25V
Vgs(th) (Max) @ Id :
2.5V @ 250µA
Datasheets
SI7101DN-T1-GE3

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