SISS32DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

17.4A (Ta), 63A (Tc)

Drain to Source Voltage (Vdss) :

80 V

Drive Voltage (Max Rds On, Min Rds On) :

7.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

42 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

1930 pF @ 40 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

PowerPAK® 1212-8S

Power Dissipation (Max) :

5W (Ta), 65.7W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

7.2mOhm @ 10A, 10V

Supplier Device Package :

PowerPAK® 1212-8S

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3.8V @ 250µA