SIS892DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

30A (Tc)

Drain to Source Voltage (Vdss) :

100 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

21.5 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

611 pF @ 50 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

PowerPAK® 1212-8

Power Dissipation (Max) :

3.7W (Ta), 52W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

29mOhm @ 10A, 10V

Supplier Device Package :

PowerPAK® 1212-8

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3V @ 250µA