TK4R3E06PL,S1X

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

80A (Tc)

Drain to Source Voltage (Vdss) :

60 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

48.2 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

3280 pF @ 30 V

Mounting Type :

Through Hole

Operating Temperature :

175°C (TJ)

Package / Case :

TO-220-3

Power Dissipation (Max) :

87W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

7.2mOhm @ 15A, 4.5V

Supplier Device Package :

TO-220

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.5V @ 500µA