AIMW120R060M1HXKSA1
- Mfr.Part #
- AIMW120R060M1HXKSA1
- Manufacturer
- Infineon Technologies
- Package/Case
- -
- Datasheet
- AIMW120R060M1HXKSA1
- Description
- 1200V COOLSIC MOSFET PG-TO247-3
- Stock
- 35000
Request A Quote(RFQ)
- * Contact Name:
- Company:
- * E-Mail:
- Whatsapp:
- Comment:
- Manufacturer :
- Infineon Technologies
- Product Category :
- Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 36A (Tc)
- Drain to Source Voltage (Vdss) :
- 1200 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 18V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 31 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1060 pF @ 800 V
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Package / Case :
- TO-247-3
- Power Dissipation (Max) :
- 150W (Tc)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 78mOhm @ 13A, 18V
- Supplier Device Package :
- PG-TO247-3-41
- Technology :
- SiCFET (Silicon Carbide)
- Vgs (Max) :
- +23V, -7V
- Vgs(th) (Max) @ Id :
- 5.7V @ 5.6mA
- Datasheets
- AIMW120R060M1HXKSA1
Manufacturer related products
Catalog related products
Related products
Part | Manufacturer | Stock | Description |
---|---|---|---|
AIMW120R035M1HXKSA1 | Infineon Technologies | 35,000 | 1200V COOLSIC MOSFET PG-TO247-3 |
AIMW120R045M1XKSA1 | Infineon Technologies | 35,000 | SICFET N-CH 1200V 52A TO247-3 |
AIMW120R080M1XKSA1 | Infineon Technologies | 35,000 | 1200V COOLSIC MOSFET PG-TO247-3 |