SI8812DB-T2-E1

Mfr.Part #
SI8812DB-T2-E1
Manufacturer
Vishay
Package/Case
-
Datasheet
SI8812DB-T2-E1
Description
MOSFET N-CH 20V 4MICROFOOT
Stock
35000

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Manufacturer :
Vishay
Product Category :
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
2.3A (Ta)
Drain to Source Voltage (Vdss) :
20 V
Drive Voltage (Max Rds On, Min Rds On) :
1.2V, 4.5V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
17 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds :
-
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
4-UFBGA
Power Dissipation (Max) :
500mW (Ta)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
59mOhm @ 1A, 4.5V
Supplier Device Package :
4-Microfoot
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±5V
Vgs(th) (Max) @ Id :
1V @ 250µA
Datasheets
SI8812DB-T2-E1

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