IPN50R800CEATMA1
- Mfr.Part #
- IPN50R800CEATMA1
- Manufacturer
- Infineon Technologies
- Package/Case
- -
- Datasheet
- IPN50R800CEATMA1
- Description
- MOSFET N-CH 500V 7.6A SOT223
- Stock
- 35000
Request A Quote(RFQ)
- * Contact Name:
- Company:
- * E-Mail:
- Whatsapp:
- Comment:
- Manufacturer :
- Infineon Technologies
- Product Category :
- Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 7.6A (Tc)
- Drain to Source Voltage (Vdss) :
- 500 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 13V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 12.4 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 280 pF @ 100 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -40°C ~ 150°C (TJ)
- Package / Case :
- TO-261-4, TO-261AA
- Power Dissipation (Max) :
- 5W (Tc)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 800mOhm @ 1.5A, 13V
- Supplier Device Package :
- PG-SOT223
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 3.5V @ 130µA
- Datasheets
- IPN50R800CEATMA1
Manufacturer related products
Catalog related products
Related products
Part | Manufacturer | Stock | Description |
---|---|---|---|
IPN50R1K4CEATMA1 | Infineon Technologies | 3,000 | MOSFET N-CH 500V 4.8A SOT223 |
IPN50R2K0CEATMA1 | Infineon Technologies | 35,000 | MOSFET N-CH 500V 3.6A SOT223 |
IPN50R3K0CE | Infineon Technologies | 35,000 | SMALL SIGNAL FIELD-EFFECT TRANSI |
IPN50R3K0CEATMA1 | Infineon Technologies | 659 | MOSFET N-CH 500V 2.6A SOT223 |
IPN50R650CEATMA1 | Infineon Technologies | 35,000 | MOSFET N-CH 500V 9A SOT223 |
IPN50R950CE | Infineon Technologies | 35,000 | COOLMOS N-CHANNEL POWER MOSFET |
IPN50R950CEATMA1 | Infineon Technologies | 2,895 | MOSFET N-CH 500V 6.6A SOT223 |