RQ6E085BNTCR

Mfr.Part #
RQ6E085BNTCR
Manufacturer
ROHM Semiconductor
Package/Case
-
Datasheet
RQ6E085BNTCR
Description
MOSFET N-CH 30V 8.5A SOT457
Stock
16

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Manufacturer :
ROHM Semiconductor
Product Category :
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
8.5A (Tc)
Drain to Source Voltage (Vdss) :
30 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
32.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
1350 pF @ 15 V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
SOT-23-6 Thin, TSOT-23-6
Power Dissipation (Max) :
1.25W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
14.4mOhm @ 8.5A, 10V
Supplier Device Package :
TSMT6 (SC-95)
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
2.5V @ 1mA
Datasheets
RQ6E085BNTCR

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