XPN9R614MC,L1XHQ

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

40A (Ta)

Drain to Source Voltage (Vdss) :

40 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

64 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

3000 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

175°C

Package / Case :

8-PowerVDFN

Power Dissipation (Max) :

840mW (Ta), 100W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

9.6mOhm @ 20A, 10V

Supplier Device Package :

8-TSON Advance-WF (3.1x3.1)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

+10V, -20V

Vgs(th) (Max) @ Id :

2.1V @ 500µA