ISP650P06NMXTSA1

Mfr.Part #
ISP650P06NMXTSA1
Manufacturer
Infineon Technologies
Package/Case
-
Datasheet
ISP650P06NMXTSA1
Description
MOSFET P-CH 60V 3.7A SOT223-4
Stock
35000

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Manufacturer :
Infineon Technologies
Product Category :
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
3.7A (Ta)
Drain to Source Voltage (Vdss) :
60 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
P-Channel
Gate Charge (Qg) (Max) @ Vgs :
39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
1600 pF @ 30 V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
TO-261-4, TO-261AA
Power Dissipation (Max) :
1.8W (Ta), 4.2W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
65mOhm @ 3.7A, 10V
Supplier Device Package :
PG-SOT223-4
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
4V @ 1.037mA
Datasheets
ISP650P06NMXTSA1

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