BTS282ZE3180AATMA2

Manufacturer :

Infineon Technologies

Product Category :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

80A (Tc)

Drain to Source Voltage (Vdss) :

49 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

Temperature Sensing Diode

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

232 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

4800 pF @ 25 V

Mounting Type :

Surface Mount

Operating Temperature :

-40°C ~ 175°C (TJ)

Package / Case :

TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

Power Dissipation (Max) :

300W (Tc)

Product Status :

Not For New Designs

Rds On (Max) @ Id, Vgs :

6.5mOhm @ 36A, 10V

Supplier Device Package :

PG-TO263-7-1

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2V @ 240µA