SIAA02DJ-T1-GE3

Mfr.Part #
SIAA02DJ-T1-GE3
Manufacturer
Vishay
Package/Case
-
Datasheet
SIAA02DJ-T1-GE3
Description
MOSFET N-CH 20V 22A/52A PPAK
Stock
6000

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Manufacturer :
Vishay
Product Category :
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
22A (Ta), 52A (Tc)
Drain to Source Voltage (Vdss) :
20 V
Drive Voltage (Max Rds On, Min Rds On) :
2.5V, 10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
1250 pF @ 10 V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
PowerPAK® SC-70-6
Power Dissipation (Max) :
3.5W (Ta), 19W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
4.7mOhm @ 8A, 10V
Supplier Device Package :
PowerPAK® SC-70-6
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
+12V, -8V
Vgs(th) (Max) @ Id :
1.6V @ 250µA
Datasheets
SIAA02DJ-T1-GE3

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