RF4C100BCTCR

Manufacturer :

ROHM Semiconductor

Product Category :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

10A (Ta)

Drain to Source Voltage (Vdss) :

20 V

Drive Voltage (Max Rds On, Min Rds On) :

1.8V, 4.5V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

23.5 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

1660 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

8-PowerUDFN

Power Dissipation (Max) :

2W (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

15.6mOhm @ 10A, 4.5V

Supplier Device Package :

HUML2020L8

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±8V

Vgs(th) (Max) @ Id :

1.2V @ 1mA