SCT2160KEHRC11

Mfr.Part #
SCT2160KEHRC11
Manufacturer
ROHM Semiconductor
Package/Case
-
Datasheet
SCT2160KEHRC11
Description
1200V, 22A, THD, SILICON-CARBIDE
Stock
35000

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Manufacturer :
ROHM Semiconductor
Product Category :
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
22A (Tc)
Drain to Source Voltage (Vdss) :
1200 V
Drive Voltage (Max Rds On, Min Rds On) :
18V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds :
1200 pF @ 800 V
Mounting Type :
Through Hole
Operating Temperature :
175°C (TJ)
Package / Case :
TO-247-3
Power Dissipation (Max) :
165W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
208mOhm @ 7A, 18V
Supplier Device Package :
TO-247N
Technology :
SiCFET (Silicon Carbide)
Vgs (Max) :
+22V, -6V
Vgs(th) (Max) @ Id :
4V @ 2.5mA
Datasheets
SCT2160KEHRC11

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