RM2N650IP
- Mfr.Part #
- RM2N650IP
- Manufacturer
- Rectron USA
- Package/Case
- -
- Datasheet
- RM2N650IP
- Description
- MOSFET N-CHANNEL 650V 2A TO251
- Stock
- 35000
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- Manufacturer :
- Rectron USA
- Product Category :
- Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 2A (Tc)
- Drain to Source Voltage (Vdss) :
- 650 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- -
- Input Capacitance (Ciss) (Max) @ Vds :
- 190 pF @ 50 V
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- TO-251-3 Stub Leads, IPak
- Power Dissipation (Max) :
- 23W (Tc)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 2.5Ohm @ 1A, 10V
- Supplier Device Package :
- TO-251
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±30V
- Vgs(th) (Max) @ Id :
- 3.5V @ 250µA
- Datasheets
- RM2N650IP
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Part | Manufacturer | Stock | Description |
---|---|---|---|
RM2N650LD | Rectron USA | 35,000 | MOSFET N-CHANNEL 650V 2A TO252-2 |