RM2N650IP

Manufacturer :

Rectron USA

Product Category :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

2A (Tc)

Drain to Source Voltage (Vdss) :

650 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

190 pF @ 50 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-251-3 Stub Leads, IPak

Power Dissipation (Max) :

23W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

2.5Ohm @ 1A, 10V

Supplier Device Package :

TO-251

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

3.5V @ 250µA