RFG50N06LE

Mfr.Part #
RFG50N06LE
Manufacturer
Harris Corporation
Package/Case
-
Datasheet
RFG50N06LE
Description
N-CHANNEL POWER MOSFET
Stock
35000

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Manufacturer :
Harris Corporation
Product Category :
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
50A (Tc)
Drain to Source Voltage (Vdss) :
60 V
Drive Voltage (Max Rds On, Min Rds On) :
5V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
2100 pF @ 25 V
Mounting Type :
Through Hole
Operating Temperature :
-55°C ~ 175°C (TJ)
Package / Case :
TO-247-3
Power Dissipation (Max) :
142W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
22mOhm @ 50A, 5V
Supplier Device Package :
TO-247
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±10V
Vgs(th) (Max) @ Id :
2V @ 250µA
Datasheets
RFG50N06LE

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