![RFP2N18](/static/common/images/loading_0.gif)
RFP2N18
- Mfr.Part #
- RFP2N18
- Manufacturer
- Harris Corporation
- Package/Case
- -
- Datasheet
- RFP2N18
- Description
- N-CHANNEL, MOSFET
- Stock
- 35000
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- Manufacturer :
- Harris Corporation
- Product Category :
- Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 2A (Tc)
- Drain to Source Voltage (Vdss) :
- 180 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- -
- Input Capacitance (Ciss) (Max) @ Vds :
- 200 pF @ 25 V
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- TO-220-3
- Power Dissipation (Max) :
- 25W (Tc)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 3.5Ohm @ 1A, 10V
- Supplier Device Package :
- TO-220
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 4V @ 2mA
- Datasheets
- RFP2N18
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