SPB02N60S5

Mfr.Part #
SPB02N60S5
Manufacturer
Infineon Technologies
Package/Case
-
Datasheet
SPB02N60S5
Description
N-CHANNEL POWER MOSFET
Stock
35000

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Manufacturer :
Infineon Technologies
Product Category :
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
1.8A (Tc)
Drain to Source Voltage (Vdss) :
600 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
240 pF @ 25 V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max) :
25W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
3Ohm @ 1.1A, 10V
Supplier Device Package :
PG-TO263-3-2
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
5.5V @ 80µA
Datasheets
SPB02N60S5

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