SIJH112E-T1-GE3

Manufacturer :

Vishay

Product Category :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

23A (Ta), 225A (Tc)

Drain to Source Voltage (Vdss) :

100 V

Drive Voltage (Max Rds On, Min Rds On) :

-

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

160 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

8050 pF @ 50 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

8-PowerTDFN

Power Dissipation (Max) :

3.3W (Ta), 333W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

2.8mOhm @ 20A, 10V

Supplier Device Package :

PowerPAK® 8 x 8

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA