SSM5H90ATU,LF

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

2.4A (Ta)

Drain to Source Voltage (Vdss) :

20 V

Drive Voltage (Max Rds On, Min Rds On) :

2.5V, 4V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

2.2 nC @ 4 V

Input Capacitance (Ciss) (Max) @ Vds :

200 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

150°C

Package / Case :

5-SMD, Flat Leads

Power Dissipation (Max) :

500mW (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

65mOhm @ 1.5A, 4V

Supplier Device Package :

UFV

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±10V

Vgs(th) (Max) @ Id :

1.2V @ 1mA