SSM6G18NU,LF

Mfr.Part #
SSM6G18NU,LF
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package/Case
-
Datasheet
SSM6G18NU,LF
Description
MOSFET P-CH 20V 2A 6UDFN
Stock
35000

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
2A (Ta)
Drain to Source Voltage (Vdss) :
20 V
Drive Voltage (Max Rds On, Min Rds On) :
1.5V, 4.5V
FET Feature :
Schottky Diode (Isolated)
FET Type :
P-Channel
Gate Charge (Qg) (Max) @ Vgs :
4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds :
270 pF @ 10 V
Mounting Type :
Surface Mount
Operating Temperature :
150°C (TJ)
Package / Case :
6-WDFN Exposed Pad
Power Dissipation (Max) :
1W (Ta)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
112mOhm @ 1A, 4.5V
Supplier Device Package :
6-µDFN (2x2)
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±8V
Vgs(th) (Max) @ Id :
1V @ 1mA
Datasheets
SSM6G18NU,LF

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