SIHLR120-GE3

Manufacturer :

Vishay

Product Category :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

7.7A (Tc)

Drain to Source Voltage (Vdss) :

100 V

Drive Voltage (Max Rds On, Min Rds On) :

4V, 5V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

12 nC @ 5 V

Input Capacitance (Ciss) (Max) @ Vds :

490 pF @ 25 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power Dissipation (Max) :

2.5W (Ta), 42W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

270mOhm @ 4.6A, 5V

Supplier Device Package :

TO-252AA

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±10V

Vgs(th) (Max) @ Id :

2V @ 250µA