ISP25DP06LMSATMA1

Mfr.Part #
ISP25DP06LMSATMA1
Manufacturer
Infineon Technologies
Package/Case
-
Datasheet
ISP25DP06LMSATMA1
Description
MOSFET P-CH 60V 1.9A SOT223
Stock
35000

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Manufacturer :
Infineon Technologies
Product Category :
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
1.9A (Ta)
Drain to Source Voltage (Vdss) :
60 V
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
FET Feature :
-
FET Type :
P-Channel
Gate Charge (Qg) (Max) @ Vgs :
13.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
420 pF @ 30 V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
TO-261-4, TO-261AA
Power Dissipation (Max) :
1.8W (Ta), 5W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
250mOhm @ 1.9A, 10V
Supplier Device Package :
PG-SOT223
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
2V @ 270µA
Datasheets
ISP25DP06LMSATMA1

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