TJ80S04M3L(T6L1,NQ
- Mfr.Part #
- TJ80S04M3L(T6L1,NQ
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package/Case
- -
- Datasheet
- TJ80S04M3L(T6L1,NQ
- Description
- MOSFET P-CH 40V 80A DPAK
- Stock
- 35000
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 80A (Ta)
- Drain to Source Voltage (Vdss) :
- 40 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 6V, 10V
- FET Feature :
- -
- FET Type :
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 158 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 7770 pF @ 10 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 175°C (TJ)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Power Dissipation (Max) :
- 100W (Tc)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 5.2mOhm @ 40A, 10V
- Supplier Device Package :
- DPAK+
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- +10V, -20V
- Vgs(th) (Max) @ Id :
- 3V @ 1mA
- Datasheets
- TJ80S04M3L(T6L1,NQ
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Part | Manufacturer | Stock | Description |
---|---|---|---|
TJ80S04M3L,LXHQ | Toshiba Electronic Devices and Storage Corporation | 35,000 | MOSFET P-CH 40V 80A DPAK |