SIHD2N80AE-GE3
- Mfr.Part #
- SIHD2N80AE-GE3
- Manufacturer
- Vishay
- Package/Case
- -
- Datasheet
- SIHD2N80AE-GE3
- Description
- MOSFET N-CH 800V 2.9A DPAK
- Stock
- 35000
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- Comment:
- Manufacturer :
- Vishay
- Product Category :
- Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 2.9A (Tc)
- Drain to Source Voltage (Vdss) :
- 800 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 10.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 180 pF @ 100 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Power Dissipation (Max) :
- 62.5W (Tc)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 2.9Ohm @ 500mA, 10V
- Supplier Device Package :
- TO-252AA
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±30V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Datasheets
- SIHD2N80AE-GE3
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