BSC084P03NS3EGATMA1
- Mfr.Part #
- BSC084P03NS3EGATMA1
- Manufacturer
- Infineon Technologies
- Package/Case
- -
- Datasheet
- BSC084P03NS3EGATMA1
- Description
- MOSFET P-CH 30V 14.9A 8TDSON
- Stock
- 35000
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- Comment:
- Manufacturer :
- Infineon Technologies
- Product Category :
- Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 14.9A (Ta), 78.6A (Tc)
- Drain to Source Voltage (Vdss) :
- 30 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 6V, 10V
- FET Feature :
- -
- FET Type :
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 57.7 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 4240 pF @ 15 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- 8-PowerTDFN
- Power Dissipation (Max) :
- 2.5W (Ta), 69W (Tc)
- Product Status :
- Last Time Buy
- Rds On (Max) @ Id, Vgs :
- 8.4mOhm @ 50A, 10V
- Supplier Device Package :
- PG-TDSON-8-5
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±25V
- Vgs(th) (Max) @ Id :
- 3V @ 110µA
- Datasheets
- BSC084P03NS3EGATMA1
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