BSB104N08NP3GXUSA1
- Mfr.Part #
- BSB104N08NP3GXUSA1
- Manufacturer
- Infineon Technologies
- Package/Case
- -
- Datasheet
- BSB104N08NP3GXUSA1
- Description
- MOSFET N-CH 80V 13A/50A 2WDSON
- Stock
- 35000
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 13A (Ta), 50A (Tc)
- Drain to Source Voltage (Vdss) :
- 80 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 31 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2100 pF @ 40 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -40°C ~ 150°C (TJ)
- Package / Case :
- 3-WDSON
- Power Dissipation (Max) :
- 2.8W (Ta), 42W (Tc)
- Product Status :
- Not For New Designs
- Rds On (Max) @ Id, Vgs :
- 10.4mOhm @ 10A, 10V
- Supplier Device Package :
- MG-WDSON-2, CanPAK M™
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 3.5V @ 40µA
- Datasheets
- BSB104N08NP3GXUSA1
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