TK6P60W,RVQ

Mfr.Part #
TK6P60W,RVQ
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package/Case
-
Datasheet
TK6P60W,RVQ
Description
MOSFET N CH 600V 6.2A DPAK
Stock
35000

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
6.2A (Ta)
Drain to Source Voltage (Vdss) :
600 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
Super Junction
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
390 pF @ 300 V
Mounting Type :
Surface Mount
Operating Temperature :
150°C (TJ)
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Max) :
60W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
820mOhm @ 3.1A, 10V
Supplier Device Package :
DPAK
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±30V
Vgs(th) (Max) @ Id :
3.7V @ 310µA
Datasheets
TK6P60W,RVQ

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