TPS1101DR

Mfr.Part #
TPS1101DR
Manufacturer
Texas Instruments
Package/Case
-
Datasheet
TPS1101DR
Description
MOSFET P-CH 15V 2.3A 8SOIC
Stock
35000

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Manufacturer :
Texas Instruments
Product Category :
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
2.3A (Ta)
Drain to Source Voltage (Vdss) :
15 V
Drive Voltage (Max Rds On, Min Rds On) :
2.7V, 10V
FET Feature :
-
FET Type :
P-Channel
Gate Charge (Qg) (Max) @ Vgs :
11.25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
-
Mounting Type :
Surface Mount
Operating Temperature :
-40°C ~ 150°C (TJ)
Power Dissipation (Max) :
791mW (Ta)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
90mOhm @ 2.5A, 10V
Supplier Device Package :
8-SOIC
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
+2V, -15V
Vgs(th) (Max) @ Id :
1.5V @ 250µA
Datasheets
TPS1101DR

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