TK6Q60W,S1VQ

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

6.2A (Ta)

Drain to Source Voltage (Vdss) :

600 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

Super Junction

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

12 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

390 pF @ 300 V

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

TO-251-3 Stub Leads, IPak

Power Dissipation (Max) :

60W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

820mOhm @ 3.1A, 10V

Supplier Device Package :

I-Pak

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

3.7V @ 310µA