DMN6010SCTB-13

Mfr.Part #
DMN6010SCTB-13
Manufacturer
Diodes Incorporated
Package/Case
-
Datasheet
DMN6010SCTB-13
Description
MOSFET BVDSS: 41V~60V TO263 T&R
Stock
35000

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Manufacturer :
Diodes Incorporated
Product Category :
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
128A (Tc)
Drain to Source Voltage (Vdss) :
60 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
2692 pF @ 25 V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max) :
5W (Ta), 312W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
10mOhm @ 25A, 10V
Supplier Device Package :
TO-263AB (D²PAK)
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
4V @ 1mA
Datasheets
DMN6010SCTB-13

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