TK6A60W,S4VX
- Mfr.Part #
- TK6A60W,S4VX
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package/Case
- -
- Datasheet
- TK6A60W,S4VX
- Description
- MOSFET N-CH 600V 6.2A TO220SIS
- Stock
- 35000
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 6.2A (Ta)
- Drain to Source Voltage (Vdss) :
- 600 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- Super Junction
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 12 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 390 pF @ 300 V
- Mounting Type :
- Through Hole
- Operating Temperature :
- 150°C (TJ)
- Package / Case :
- TO-220-3 Full Pack
- Power Dissipation (Max) :
- 30W (Tc)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 750mOhm @ 3.1A, 10V
- Supplier Device Package :
- TO-220SIS
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±30V
- Vgs(th) (Max) @ Id :
- 3.7V @ 310µA
- Datasheets
- TK6A60W,S4VX
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