TK8A60W,S4VX

Mfr.Part #
TK8A60W,S4VX
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package/Case
-
Datasheet
TK8A60W,S4VX
Description
MOSFET N-CH 600V 8A TO220SIS
Stock
35000

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
8A (Ta)
Drain to Source Voltage (Vdss) :
600 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
Super Junction
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
570 pF @ 300 V
Mounting Type :
Through Hole
Operating Temperature :
150°C (TJ)
Package / Case :
TO-220-3 Full Pack
Power Dissipation (Max) :
30W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
500mOhm @ 4A, 10V
Supplier Device Package :
TO-220SIS
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±30V
Vgs(th) (Max) @ Id :
3.7V @ 400µA
Datasheets
TK8A60W,S4VX

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