R6035ENZ4C13

Manufacturer :

ROHM Semiconductor

Product Category :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

35A (Tc)

Drain to Source Voltage (Vdss) :

600 V

Drive Voltage (Max Rds On, Min Rds On) :

10V, 15V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

-

Mounting Type :

Through Hole

Operating Temperature :

-

Package / Case :

TO-247-3

Power Dissipation (Max) :

379W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

102mOhm @ 35A, 15V

Supplier Device Package :

TO-247

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

-

Vgs(th) (Max) @ Id :

-