BSS606NH6327

Manufacturer :

Infineon Technologies

Product Category :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

3.2A (Ta)

Drain to Source Voltage (Vdss) :

60 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

5.6 nC @ 5 V

Input Capacitance (Ciss) (Max) @ Vds :

657 pF @ 25 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-243AA

Power Dissipation (Max) :

1W (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

60mOhm @ 3.2A, 10V

Supplier Device Package :

PG-SOT89-4-2

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.3V @ 15µA