GT52N10T
- Mfr.Part #
- GT52N10T
- Manufacturer
- Goford Semiconductor
- Package/Case
- -
- Datasheet
- GT52N10T
- Description
- N100V,RD(MAX)<9M@10V,RD(MAX)<15M
- Stock
- 35000
Request A Quote(RFQ)
- * Contact Name:
- Company:
- * E-Mail:
- Whatsapp:
- Comment:
- Manufacturer :
- Goford Semiconductor
- Product Category :
- Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 80A
- Drain to Source Voltage (Vdss) :
- 100 V
- Drive Voltage (Max Rds On, Min Rds On) :
- -
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 44.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2626 pF @ 50 V
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- TO-220-3 Full Pack
- Power Dissipation (Max) :
- 227W
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 9mOhm @ 50A, 10V
- Supplier Device Package :
- TO-220
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 2.5V @ 250µA
- Datasheets
- GT52N10T
Manufacturer related products
Catalog related products
Related products
Part | Manufacturer | Stock | Description |
---|---|---|---|
GT52N10D5 | Goford Semiconductor | 15,635 | N100V,RD(MAX)<7.5M@10V,RD(MAX)<1 |