RFP4N100

Manufacturer :

onsemi

Product Category :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

4.3A (Tc)

Drain to Source Voltage (Vdss) :

1000 V

Drive Voltage (Max Rds On, Min Rds On) :

-

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

120 nC @ 20 V

Input Capacitance (Ciss) (Max) @ Vds :

-

Mounting Type :

Through Hole

Operating Temperature :

-

Package / Case :

TO-220-3

Power Dissipation (Max) :

-

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

3.5Ohm @ 2.5A, 10V

Supplier Device Package :

TO-220-3

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

-

Vgs(th) (Max) @ Id :

4V @ 250µA