SPA11N60C3IN

Mfr.Part #
SPA11N60C3IN
Manufacturer
Infineon Technologies
Package/Case
-
Datasheet
SPA11N60C3IN
Description
MOSFET N-CH 650V 11A TO220-3-31
Stock
35000

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Manufacturer :
Infineon Technologies
Product Category :
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
11A (Tc)
Drain to Source Voltage (Vdss) :
650 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
1200 pF @ 25 V
Mounting Type :
Through Hole
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
TO-220-3 Full Pack
Power Dissipation (Max) :
33W (Tc)
Product Status :
Discontinued at Digi-Key
Rds On (Max) @ Id, Vgs :
380mOhm @ 7A, 10V
Supplier Device Package :
PG-TO220-3-31
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
3.9V @ 500µA
Datasheets
SPA11N60C3IN

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