SPB03N60C3ATMA1
- Mfr.Part #
- SPB03N60C3ATMA1
- Manufacturer
- Infineon Technologies
- Package/Case
- -
- Datasheet
- SPB03N60C3ATMA1
- Description
- MOSFET N-CH 650V 3.2A TO263-3
- Stock
- 35000
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- Comment:
- Manufacturer :
- Infineon Technologies
- Product Category :
- Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 3.2A (Tc)
- Drain to Source Voltage (Vdss) :
- 650 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 17 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 400 pF @ 25 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Power Dissipation (Max) :
- 38W (Tc)
- Product Status :
- Obsolete
- Rds On (Max) @ Id, Vgs :
- 1.4Ohm @ 2A, 10V
- Supplier Device Package :
- PG-TO263-3-2
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 3.9V @ 135µA
- Datasheets
- SPB03N60C3ATMA1
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