FQE10N20CTU
- Mfr.Part #
- FQE10N20CTU
- Manufacturer
- onsemi
- Package/Case
- -
- Datasheet
- FQE10N20CTU
- Description
- MOSFET N-CH 200V 4A TO126-3
- Stock
- 35000
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- Manufacturer :
- onsemi
- Product Category :
- Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 4A (Tc)
- Drain to Source Voltage (Vdss) :
- 200 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 26 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 510 pF @ 25 V
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- TO-225AA, TO-126-3
- Power Dissipation (Max) :
- 12.8W (Tc)
- Product Status :
- Obsolete
- Rds On (Max) @ Id, Vgs :
- 360mOhm @ 2A, 10V
- Supplier Device Package :
- TO-126-3
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±30V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Datasheets
- FQE10N20CTU
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Part | Manufacturer | Stock | Description |
---|---|---|---|
FQE10N20LCTU | onsemi | 35,000 | MOSFET N-CH 200V 4A TO126-3 |