- Manufacturer :
- onsemi
- Product Category :
- Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 1A (Tc)
- Drain to Source Voltage (Vdss) :
- 600 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 6 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 150 pF @ 25 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Power Dissipation (Max) :
- 2.5W (Ta), 30W (Tc)
- Product Status :
- Obsolete
- Rds On (Max) @ Id, Vgs :
- 11.5Ohm @ 500mA, 10V
- Supplier Device Package :
- TO-252AA
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±30V
- Vgs(th) (Max) @ Id :
- 5V @ 250µA
- Datasheets
- FQD1N60TF
Manufacturer related products
Catalog related products
Related products
Part | Manufacturer | Stock | Description |
---|---|---|---|
FQD10N20CTF | onsemi | 35,000 | MOSFET N-CH 200V 7.8A DPAK |
FQD10N20CTM | onsemi | 35,000 | MOSFET N-CH 200V 7.8A DPAK |
FQD10N20CTM_F080 | onsemi | 35,000 | MOSFET N-CH 200V 7.8A DPAK |
FQD10N20LTF | onsemi | 35,000 | MOSFET N-CH 200V 7.6A TO252 |
FQD10N20LTM | onsemi | 6,300 | MOSFET N-CH 200V 7.6A TO252 |
FQD10N20TF | onsemi | 35,000 | MOSFET N-CH 200V 7.6A DPAK |
FQD10N20TM | onsemi | 35,000 | MOSFET N-CH 200V 7.6A DPAK |
FQD11P06TF | onsemi | 35,000 | MOSFET P-CH 60V 9.4A DPAK |
FQD11P06TM | onsemi | 35,000 | MOSFET P-CH 60V 9.4A DPAK |
FQD12N20LTF | onsemi | 35,000 | MOSFET N-CH 200V 9A DPAK |
FQD12N20LTM | onsemi | 35,000 | MOSFET N-CH 200V 9A DPAK |
FQD12N20LTM-F085P | onsemi | 35,000 | MOSFET N-CH 200V 9A TO252 |
FQD12N20LTM_SN00173 | onsemi | 35,000 | MOSFET N-CH 200V 9A DPAK |
FQD12N20TF | onsemi | 35,000 | MOSFET N-CH 200V 9A DPAK |
FQD12N20TM | onsemi | 35,000 | MOSFET N-CH 200V 9A DPAK |