- Manufacturer :
- onsemi
- Product Category :
- Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 3.5A (Tc)
- Drain to Source Voltage (Vdss) :
- 400 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 23 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 680 pF @ 25 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Power Dissipation (Max) :
- 3.13W (Ta), 85W (Tc)
- Product Status :
- Obsolete
- Rds On (Max) @ Id, Vgs :
- 3.1Ohm @ 1.75A, 10V
- Supplier Device Package :
- D²PAK (TO-263)
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±30V
- Vgs(th) (Max) @ Id :
- 5V @ 250µA
- Datasheets
- FQB4P40TM
Manufacturer related products
Catalog related products
Related products
Part | Manufacturer | Stock | Description |
---|---|---|---|
FQB44N10TM | onsemi | 5 | MOSFET N-CH 100V 43.5A D2PAK |
FQB45N15V2TM | onsemi | 35,000 | MOSFET N-CH 150V 45A D2PAK |
FQB46N15TM | Fairchild Semiconductor | 570 | N-CHANNEL POWER MOSFET |
FQB46N15TM_AM002 | onsemi | 35,000 | MOSFET N-CH 150V 45.6A D2PAK |
FQB47P06TM-AM002 | onsemi | 35,000 | MOSFET P-CH 60V 47A D2PAK |
FQB4N20LTM | onsemi | 35,000 | MOSFET N-CH 200V 3.8A D2PAK |
FQB4N20TM | onsemi | 35,000 | MOSFET N-CH 200V 3.6A D2PAK |
FQB4N25TM | onsemi | 35,000 | MOSFET N-CH 250V 3.6A D2PAK |
FQB4N50TM | onsemi | 35,000 | MOSFET N-CH 500V 3.4A D2PAK |
FQB4N80TM | Fairchild Semiconductor | 35,000 | POWER FIELD-EFFECT TRANSISTOR, 3 |
FQB4N90TM | onsemi | 35,000 | MOSFET N-CH 900V 4.2A D2PAK |
FQB4P25TM | onsemi | 35,000 | MOSFET P-CH 250V 4A D2PAK |