- Manufacturer :
- onsemi
- Product Category :
- Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 61A (Tc)
- Drain to Source Voltage (Vdss) :
- 100 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 98 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2730 pF @ 25 V
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Package / Case :
- TO-3P-3, SC-65-3
- Power Dissipation (Max) :
- 190W (Tc)
- Product Status :
- Obsolete
- Rds On (Max) @ Id, Vgs :
- 26mOhm @ 30.5A, 10V
- Supplier Device Package :
- TO-3P
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±25V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Datasheets
- FQA55N10
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