BSP123E6327T

Mfr.Part #
BSP123E6327T
Manufacturer
Infineon Technologies
Package/Case
-
Datasheet
BSP123E6327T
Description
MOSFET N-CH 100V 370MA SOT223-4
Stock
35000

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Manufacturer :
Infineon Technologies
Product Category :
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
370mA (Ta)
Drain to Source Voltage (Vdss) :
100 V
Drive Voltage (Max Rds On, Min Rds On) :
2.8V, 10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
2.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
70 pF @ 25 V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
TO-261-4, TO-261AA
Power Dissipation (Max) :
1.79W (Ta)
Product Status :
Obsolete
Rds On (Max) @ Id, Vgs :
6Ohm @ 370mA, 10V
Supplier Device Package :
PG-SOT223-4
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
1.8V @ 50µA
Datasheets
BSP123E6327T

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