- Manufacturer :
- onsemi
- Product Category :
- Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 48A (Ta)
- Drain to Source Voltage (Vdss) :
- 30 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 4.5V, 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 18 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1250 pF @ 15 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -65°C ~ 175°C (TJ)
- Package / Case :
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Power Dissipation (Max) :
- 52W (Tc)
- Product Status :
- Obsolete
- Rds On (Max) @ Id, Vgs :
- 13mOhm @ 26A, 10V
- Supplier Device Package :
- D²PAK (TO-263)
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Datasheets
- FDB6030L
Manufacturer related products
Catalog related products
Related products
Part | Manufacturer | Stock | Description |
---|---|---|---|
FDB6021P | onsemi | 35,000 | MOSFET P-CH 20V 28A TO263AB |
FDB6030BL | onsemi | 35,000 | MOSFET N-CH 30V 40A R-6 |
FDB6035AL | Fairchild Semiconductor | 172,290 | N-CHANNEL POWER MOSFET |
FDB6035L | Fairchild Semiconductor | 800 | N-CHANNEL POWER MOSFET |
FDB603AL | Fairchild Semiconductor | 39,200 | N-CHANNEL POWER MOSFET |
FDB6670AL | onsemi | 35,000 | MOSFET N-CH 30V 80A TO263AB |
FDB6670AS | onsemi | 35,000 | MOSFET N-CH 30V 62A TO263AB |
FDB6670S | Fairchild Semiconductor | 19,090 | N-CHANNEL POWER MOSFET |
FDB6676 | Fairchild Semiconductor | 25,443 | N-CHANNEL POWER MOSFET |
FDB6690S | onsemi | 35,000 | MOSFET N-CH 30V 42A TO263AB |