FQA6N80_F109
- Mfr.Part #
- FQA6N80_F109
- Manufacturer
- onsemi
- Package/Case
- -
- Datasheet
- FQA6N80_F109
- Description
- MOSFET N-CH 800V 6.3A TO3P
- Stock
- 35000
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- Comment:
- Manufacturer :
- onsemi
- Product Category :
- Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 6.3A (Tc)
- Drain to Source Voltage (Vdss) :
- 800 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 31 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1500 pF @ 25 V
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- TO-3P-3, SC-65-3
- Power Dissipation (Max) :
- 185W (Tc)
- Product Status :
- Obsolete
- Rds On (Max) @ Id, Vgs :
- 1.95Ohm @ 3.15A, 10V
- Supplier Device Package :
- TO-3P
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±30V
- Vgs(th) (Max) @ Id :
- 5V @ 250µA
- Datasheets
- FQA6N80_F109
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